Variation Study and Implications for BJT-Based Thin-Body Capacitorless DRAMHEE CHO, Min; KING LIU, Tsu-Jae.IEEE electron device letters. 2012, Vol 33, Num 3, pp 312-314, issn 0741-3106, 3 p.Article

Spacer Gate Lithography for Reduced Variability Due to Line Edge RoughnessXIN SUN; KING LIU, Tsu-Jae.IEEE transactions on semiconductor manufacturing. 2010, Vol 23, Num 2, pp 311-315, issn 0894-6507, 5 p.Article

Study of Random Dopant Fluctuation Induced Variability in the Raised-Ge-Source TFETDAMRONGPLASIT, Nattapol; SUNG HWAN KIM; KING LIU, Tsu-Jae et al.IEEE electron device letters. 2013, Vol 34, Num 2, pp 184-186, issn 0741-3106, 3 p.Article

Electrical Characterization of Etch Rate for Micro- and Nano-Scale Gap FormationLEE, Donovan; TRAN, Helen; HO, Byron et al.Journal of microelectromechanical systems. 2010, Vol 19, Num 5, pp 1260-1263, issn 1057-7157, 4 p.Article

Design Optimization of Multigate Bulk MOSFETsHO, Byron; XIN SUN; SHIN, Changhwan et al.I.E.E.E. transactions on electron devices. 2013, Vol 60, Num 1, pp 28-33, issn 0018-9383, 6 p.Article

Raised-Source/Drain Double-Gate Transistor Design Optimization for Low Operating PowerCHEN, Deirdre; JACOBSON, Zachery A; KING LIU, Tsu-Jae et al.I.E.E.E. transactions on electron devices. 2013, Vol 60, Num 3, pp 1040-1045, issn 0018-9383, 6 p.Article

Characterization of polycrystalline silicon-germanium film deposition for modularly integrated MEMS applicationsLOW, Carrie W; KING LIU, Tsu-Jae; HOWE, Roger T et al.Journal of microelectromechanical systems. 2007, Vol 16, Num 1, pp 68-77, issn 1057-7157, 10 p.Article

A New Switching Device for Printed Electronics: Inkjet-Printed Microelectromechanical RelayEUNG SEOK PARK; YENHAO CHEN; KING LIU, Tsu-Jae et al.Nano letters (Print). 2013, Vol 13, Num 11, pp 5355-5360, issn 1530-6984, 6 p.Article

Impact of Gate Line-Edge Roughness (LER) Versus Random Dopant Fluctuations (RDF) on Germanium-Source Tunnel FET PerformanceDAMRONGPLASIT, Nattapol; SUNG HWAN KIM; CHANGHWAN SHIN et al.IEEE transactions on nanotechnology. 2013, Vol 12, Num 6, pp 1061-1067, issn 1536-125X, 7 p.Article

Characterization of Dynamic SRAM Stability in 45 nm CMOSSENG OON TOH; ZHENG GUO; KING LIU, Tsu-Jae et al.IEEE journal of solid-state circuits. 2011, Vol 46, Num 11, pp 2702-2712, issn 0018-9200, 11 p.Article

Planar GeOI TFET Performance Improvement With Back BiasingMATHEU, Peter; HO, Byron; JACOBSON, Zachery A et al.I.E.E.E. transactions on electron devices. 2012, Vol 59, Num 6, pp 1629-1635, issn 0018-9383, 7 p.Article

Effectiveness of Stressors in Aggressively Scaled FinFETsNUO XU; HO, Byron; CHOI, Munkang et al.I.E.E.E. transactions on electron devices. 2012, Vol 59, Num 6, pp 1592-1598, issn 0018-9383, 7 p.Article

SRAM Read/Write Margin Enhancements Using FinFETsCARLSON, Andrew; ZHENG GUO; BALASUBRAMANIAN, Sriram et al.IEEE transactions on very large scale integration (VLSI) systems. 2010, Vol 18, Num 6, pp 887-900, issn 1063-8210, 14 p.Article

Selected papers from the 6th International SiGe Technology and Device Meeting (ISTDM 2012)KOESTER, Steven J; KING LIU, Tsu-Jae; HARTMANN, Jean-Michel et al.Solid-state electronics. 2013, Vol 83, issn 0038-1101, 120 p.Conference Proceedings

Band-edge electronic structures, and pre-existing defects in remote plasma deposited (RPD) non-crystalline (nc-) SiO₂ and GeO₂LUCOVSKY, Gerald.Solid-state electronics. 2013, Vol 83, pp 30-36, issn 0038-1101, 7 p.Conference Paper

Characterization of anisotropic strain relaxation after isolation for strained SGOI and SiGe/Si structure with newly developed high-NA and oil-immersion Raman methodUSUDA, Koji; TEZUKA, Tsutomu; KOSEMURA, Daisuke et al.Solid-state electronics. 2013, Vol 83, pp 46-49, issn 0038-1101, 4 p.Conference Paper

Development of epitaxial growth technology for Ge_1―xSn_x alloy and study of its properties for Ge nanoelectronicsNAKATSUKA, Osamu; SHIMURA, Yosuke; TAKEUCHI, Wakana et al.Solid-state electronics. 2013, Vol 83, pp 82-86, issn 0038-1101, 5 p.Conference Paper

Phosphorus atomic layer doping in Ge using RPCVDYAMAMOTO, Yuji; KURPS, Rainer; MAI, Christian et al.Solid-state electronics. 2013, Vol 83, pp 25-29, issn 0038-1101, 5 p.Conference Paper

The SiGeSn approach towards Si-based lasersSUN, G; YU, S.-Q.Solid-state electronics. 2013, Vol 83, pp 76-81, issn 0038-1101, 6 p.Conference Paper

First Demonstration of Quasi-Planar Segmented-Channel MOSFET Design for Improved ScalabilityHO, Byron; XIN SUN; NUO XU et al.I.E.E.E. transactions on electron devices. 2012, Vol 59, Num 8, pp 2273-2276, issn 0018-9383, 4 p.Article

Comparative Study of Uniform Versus Supersteep Retrograde MOSFET Channel Doping and Implications for 6-T SRAM YieldDAMRONGPLASIT, Nattapol; NUO XU; TAKEUCHI, Hideki et al.I.E.E.E. transactions on electron devices. 2013, Vol 60, Num 5, pp 1790-1793, issn 0018-9383, 4 p.Article

Epitaxial growth and anisotropic strain relaxation of Ge_1―xSn_x layers on Ge(110) substratesASANO, Takanori; SHIMURA, Yosuke; TAOKA, Noriyuki et al.Solid-state electronics. 2013, Vol 83, pp 71-75, issn 0038-1101, 5 p.Conference Paper

Low temperature RPCVD epitaxial growth of Si_1―xGe_x using Si₂H₆ and Ge₂H₆WIRTHS, S; BUCA, D; TIEDEMANN, A. T et al.Solid-state electronics. 2013, Vol 83, pp 2-9, issn 0038-1101, 8 p.Conference Paper

Fabrication of bonded GeOI substrates with thin Al₂O₃/SiO₂ buried oxide layersMORIYAMA, Yoshihiko; IKEDA, Keiji; KAMIMUTA, Yuuichi et al.Solid-state electronics. 2013, Vol 83, pp 42-45, issn 0038-1101, 4 p.Conference Paper

n―Si―p-Si_1―xGe_x nanowire arrays for thermoelectric power generationBIN XU; CHUANBO LI; MYRONOV, Maksym et al.Solid-state electronics. 2013, Vol 83, pp 107-112, issn 0038-1101, 6 p.Conference Paper